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Volume :36 Issue : 2 2009      Add To Cart                                                                    Download

Low energy antimony implantation in p-type silicon for ultra-shallow junction formation

Auther : T. ALZANKI*, R. G. WILLIAM**, N. EMERSON** AND B. J. SEALY**

ABSTRACT

The effect of ion dose on the atomic profiles and sheet resistance has been investigated for silicon implanted with 2keV and 5keV antimony ions at doses between 1 X 1014 to 1 X 1015 cm-2. Atomic profiles are determined using secondary ion mass spectroscopy (SIMS) and the sheet resistance values obtained using the van der Pauw technique. The junction depth was measured, assuming a background doping concentration of 1 X 1018 cm-3 in a modern complementary metal-oxide semiconductor (CMOS) device, and is in the range of 15-20 nm. The lowest sheet resistances (850 ohm/square) were obtained after annealing at 7000C showing that optimum electrical characteristics of shallow junction and low sheet resistance require a much lower thermal budget than current processes used by industry.
Keywords: Differential Hall Effect; Rapid thermal annealing; Antimony; shallow junction formation; Silicon.
 

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